Produktname:N-Isopropylmethacrylamide

IUPAC Name:2-methyl-N-(propan-2-yl)prop-2-enamide

CAS:13749-61-6
Molekulare Formel:C7H13NO
Reinheit:95%
Katalognummer:CM249112
Molekulargewicht:127.19

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Produkt-Details

CAS-Nr.:13749-61-6
Molekulare Formel:C7H13NO
Schmelzpunkt:-
SMILES-Code:CC(C)NC(=O)C(C)=C
Dichte:
Katalognummer:CM249112
Molekulargewicht:127.19
Siedepunkt:241.1°C at 760 mmHg
Mdl-Nr.:MFCD00192246
Lagerung:Store at 2-8°C.

Category Infos

Aliphatic Chain Compounds
Aliphatic chain compounds include aliphatic compounds and chain compounds containing other elements or groups. Aliphatic hydrocarbons are hydrocarbons with the basic properties of aliphatic compounds. In aliphatic compounds, carbon atoms are arranged in straight chain, branched chain or cyclic, which are respectively called straight chain aliphatic hydrocarbons, branched chain aliphatic hydrocarbons and alicyclic hydrocarbons. Some cyclic hydrocarbons are different in nature from aromatic hydrocarbons, and are very similar to aliphatic hydrocarbons. Such cyclic hydrocarbons are called alicyclic hydrocarbons. In this way, aliphatic hydrocarbons become a general term for all hydrocarbons except aromatic hydrocarbons. Aliphatic hydrocarbons and their derivatives (including halogenated hydrocarbons) and alicyclic hydrocarbons and their derivatives are collectively referred to as aliphatic compounds.
Photoresist
Semiconductors could be termed as the most extensively utilized substance in the modern century. Polycrystalline wafers are used to make semiconductors. A single 300-mm silicon wafer may create hundreds of chips. Photoresist coatings and materials are an essential part of their fabrication as they are the main constituents of the photolithography process during the fabrication of the semiconductors. Photoresist is a mixed liquid that is sensitive to light. Its components include: photoinitiators (including photosensitizers, photoacid generators), photoresist resins, monomers, solvents and other additives. The photoresist can transfer the required fine pattern from the photomask (mask) to the substrate to be processed through photochemical reaction and photolithography processes such as exposure and development.