IUPAC Name:2-{[4-(9-{4-[(oxiran-2-yl)methoxy]phenyl}-9H-fluoren-9-yl)phenoxy]methyl}oxirane
- CAS:47758-37-2
- Molekulare Formel:C31H26O4
- Reinheit:95%+
- Katalognummer:CM393074
- Molekulargewicht:462.55
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Produkt-Details
- CAS-Nr.:47758-37-2
- Molekulare Formel:C31H26O4
- Schmelzpunkt:-
- SMILES-Code:C(OC1=CC=C(C=C1)C1(C2=CC=CC=C2C2=CC=CC=C12)C1=CC=C(OCC2CO2)C=C1)C1CO1
- Dichte:
- Katalognummer:CM393074
- Molekulargewicht:462.55
- Siedepunkt:
- Mdl-Nr.:
- Lagerung:
Category Infos
- Oxiranes
- Oxirane is a three-membered ring compound consisting of one oxygen atom and two carbon atoms. Oxirane is present in natural products such as cryptocin, which has anticancer properties, and azidomycin, trienone, and epoxidomycin, which have shown activity against drug-resistant leukemias and AIDS-related lymphomas. Other oxirane containing bioactive molecules have anti-inflammatory, immunosuppressive, and antitumor activities. Oxiranes are a strained ring susceptible to various nucleophilic, ring-opening or rearrangement reactions, so they are considered to be one of the most important intermediates in organic synthesis.
- Fluorenes
- Fluorene is a polycyclic aromatic hydrocarbon insoluble in water and soluble in many organic solvents. Fluorenes are one of the most important fluorescent molecules with applications in polymers, electronic devices, sensors, and photochromic materials.
- Photoresist
- Semiconductors could be termed as the most extensively utilized substance in the modern century. Polycrystalline wafers are used to make semiconductors. A single 300-mm silicon wafer may create hundreds of chips. Photoresist coatings and materials are an essential part of their fabrication as they are the main constituents of the photolithography process during the fabrication of the semiconductors. Photoresist is a mixed liquid that is sensitive to light. Its components include: photoinitiators (including photosensitizers, photoacid generators), photoresist resins, monomers, solvents and other additives. The photoresist can transfer the required fine pattern from the photomask (mask) to the substrate to be processed through photochemical reaction and photolithography processes such as exposure and development.